SmNi4B: A narrow domain-wall ferromagnet
SmNi4B: A narrow domain-wall ferromagnet
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DOI：
10.1063/1.1306294
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发表时间：
2000-08
影响因子：
4
通讯作者：
C. Mazumdar;R. Nagarajan;L. C. Gupta;B. D. Padalia;R. Vijayaraghavan
中科院分区：
文献类型：
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作者：
C. Mazumdar;R. Nagarajan;L. C. Gupta;B. D. Padalia;R. Vijayaraghavan
我们研究了SmNi4B的磁性。该材料在TC≈39K时具有铁磁有序结构，比等结构的GdNi4B(≈36K)的铁磁有序程度高。饱和磁矩较小(5K时为0.15μB/Sm)，表明存在晶场效应。在Tc以下，该材料表现出很大的热磁不可逆性和5K时的大磁滞，矫顽场为≈28Koe，这是Sm基材料中观察到的最大的磁滞回线之一。我们认为，大的矫顽场是本征的，与只有一个原子层厚度的窄域壁有关，这类似于铁电壁。
We have investigated magnetic properties of SmNi4B. The material undergoes a ferromagnetic ordering at TC≈39 K, which, surprisingly, is higher than that of isostructural GdNi4B (≈36 K). The saturation magnetic moment is rather small (0.15 μB per Sm at 5 K), suggesting the presence of crystal-field effects. Below TC, the material exhibits a large thermomagnetic irreversibility and also a large magnetic hysteresis at 5 K with a coercive field ≈28 kOe, which is one of the largest observed in a Sm-based material. We suggest that the large coercive field is intrinsic, associated with narrow domain walls of thickness of only one atomic layer, which resembles a ferroelectric wall.