Spin relaxation through lateral spin transport in heavily doped n-type silicon
Spin relaxation through lateral spin transport in heavily doped n-type silicon
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DOI：
10.1103/physrevb.95.115302
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发表时间：
2017-03-03
影响因子：
3.7
通讯作者：
Hamaya, K.
中科院分区：
文献类型：
--
作者：
Ishikawa, M.;Oka, T.;Hamaya, K.
通过测量小尺寸CoFe/MgO/Si横向自旋阀（LSV）器件的非局域磁电阻，实验研究了重掺杂n型硅（n+-Si）层中自旋弛豫（包括横向自旋扩散）随温度的变化.即使在室温下，我们观察到大的自旋信号，50倍的幅度在以前的作品上的n+-Si。通过测量LSV中的自旋信号与各种中心到中心的距离之间的接触，我们可靠地评估温度依赖的自旋扩散长度（λ（Si））和自旋寿命（τ（Si））。我们发现tSi的温度依赖性受到n+-Si层中的扩散常数的影响，这意味着理解沟道迁移率的温度依赖性是很重要的。根据Dery及其同事最近的理论，讨论了tSi的温度依赖性的可能起源。
We experimentally study temperature-dependent spin relaxation including lateral spin diffusion in heavily doped n-type silicon (n+-Si) layers by measuring nonlocal magnetoresistance in small-sized CoFe/MgO/Si lateral spin-valve (LSV) devices. Even at room temperature, we observe large spin signals, 50-fold the magnitude of those in previous works on n+-Si. By measuring spin signals in LSVs with various center-to-center distances between contacts, we reliably evaluate the temperature-dependent spin diffusion length (lambda(Si)) and spin lifetime (tau(Si)). We find that the temperature dependence of tSi is affected by that of the diffusion constant in the n+-Si layers, meaning that it is important to understand the temperature dependence of the channel mobility. A possible origin of the temperature dependence of tSi is discussed in terms of the recent theories by Dery and co-workers.