Current filamentation in n-GaAs thin films with different contact geometries
Current filamentation in n-GaAs thin films with different contact geometries
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DOI：
10.1088/0268-1242/15/6/319
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发表时间：
2000-06
影响因子：
1.9
通讯作者：
G. Schwarz;C. Lehmann;A. Reimann;E. Schöll;J. Hirschinger;W. Prettl;V. Novák
中科院分区：
文献类型：
--
作者：
G. Schwarz;C. Lehmann;A. Reimann;E. Schöll;J. Hirschinger;W. Prettl;V. Novák
我们研究了不同样品和接触几何形状的n-GaAs中低温杂质击穿区的电流分布。基于动态微观模型的计算机模拟与薄外延层的空间分辨测量进行了比较。通过改变外加偏压、负载电阻和磁场，可以有效地控制两点接触矩形样品中细丝的形状和尺寸。多稳态和滞后，由于连续的多个灯丝的形成，发现在Corbino磁盘扫上和扫下的电压和解释我们的模型。
We investigate current filamentation in n-GaAs in the regime of low-temperature impurity breakdown for different sample and contact geometries. Computer simulations based on a dynamic microscopic model are compared with spatially resolved measurements in thin epitaxial layers. By varying the applied bias, load resistance and magnetic field, one can effectively control the shape and the size of the filaments in rectangular samples with two point contacts. Multistability and hysteresis due to the successive symmetry-breaking formation of multiple filaments are found in Corbino discs upon sweep-up and sweep-down of the voltage and explained by our model.