ALN SUBSTRATES WITH HIGH THERMAL-CONDUCTIVITY
ALN SUBSTRATES WITH HIGH THERMAL-CONDUCTIVITY
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DOI：
10.1109/tchmt.1985.1136500
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发表时间：
1985-01-01
期刊：
影响因子：
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通讯作者：
NOGUCHI, S
中科院分区：
文献类型：
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作者：
KUROKAWA, Y;UTSUMI, K;NOGUCHI, S
采用热压烧结技术制备了一种室温热导率高达160 W/mK的氮化铝（AlN）基片。新型AlN基板具有以下优异特性。1)室温下的热导率是Al_2 O_3的8倍，在150°C下几乎等于99.5%的BeO。2)热膨胀系数小于Al 2 O 3和BeO，接近硅半导体芯片的热膨胀系数。3)在较宽的频率范围内，其电学性能几乎与Al_2 O_3和BeO相当。4)它不仅具有较高的机械强度，而且比Al 2 O 3更容易加工。其特征在于其从可见光到红外波长区域的透光性。结果表明，采用传统的蒸发法和溅射法可以对AlN基片进行金属化，并具有良好的附着力。发现新的AlN可应用于三种半导体器件：1）硅外延晶体管，2）GaAlAs发光二极管，和3）InGaAsP激光二极管。此外，另一种AlN基板是使用正常的烧结技术，它具有高的热导率为140 W/mK在室温下开发。
A new aluminum nitride (AIN) substrate, which has high thermal conductivity of 160 W/mK at room temperture, has been developed using the hot press sintering technique. The new AIN substrate has the following excellent characteristics. 1) The thermal conductivity is eight times as high as that of AI2O3at room temperature and is almost equal to that of 99.5 percent BeO at 150°C. 2) The thermal expansion coefficient is smaller than that of AI2O3and BeO, and is close to that of a silicon semiconductor chip. 3) The electrical properties are almost as good as those for AI2O3and BeO in the wide frequency range. 4) It not only has higher mechanical stength but also easier machinable property than AI2O3. It is characterized by its light transparency from visible light to the infrared wavelength region. It was proved that the new AIN substrate is able to be metallized with good adhesion strength by the conventional evaporating method and the conventional sputtering method. The new AIN was found to be applicable to three kinds of semiconductor devices: 1) silicon epitaxial transistor, 2) GaAIAs light emitting diode, and 3) InGaAsP laser diode. Also, another AIN substrate was developed using the normal sintering technique, which has high thermal conductivity of 140 W/mK at room temperature.