SYSTEMATIC STUDY OF THE STABLE STATES OF C-, SI-, GE-, AND SN- VIA INFRARED LASER SPECTROSCOPY
SYSTEMATIC STUDY OF THE STABLE STATES OF C-, SI-, GE-, AND SN- VIA INFRARED LASER SPECTROSCOPY
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DOI：
10.1103/physreva.58.2844
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发表时间：
1998-10
影响因子：
2.9
通讯作者：
M. Scheer;R. Bilodeau;C. Brodie;H. Haugen
中科院分区：
文献类型：
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作者：
M. Scheer;R. Bilodeau;C. Brodie;H. Haugen
通过结合单光子和多光子可调谐红外激光实验，研究了 Si−、Ge− 和 Sn− 的束缚激发 np 3 2 D 项。发现两个 J= 3/2 和 J= 5/2 精细结构能级的结合能分别为 Si− 的 0.527 234 (25) 和 0.525 489 (20) eV，Ge− 的 0.401 44 (10) 和 0.377 27 (6) eV，以及 0.397 617 (15) 和 0.397 617 (15) 和 0.377 27 (6) eV。 Sn− 为 0.304 635 (15) eV。这些结果比之前的实验项能量精度提高了四个数量级，并进一步提供了二维精细结构分裂的实验值：Si−、Ge− 和 Sn− 分别为 14.08 (20)、192.6 (9) 和 749.95 (15) cm−1。此外，还重新研究了离子 4 S 3/2 基态的光脱离阈值。这使得 C−、Si−、Ge− 和 Sn− 的电子亲和势分别提高到 1.262 119 (20)、1.389 521 (20)、1.232 712 (15) 和 1.112 067 (15) eV。观察非常弱束缚的 C−(2 D) 和 Si−(2 P) 项的各种尝试仍然不成功。
The bound excited np 3 2 D terms of Si−, Ge−, and Sn− have been investigated with a combination of single-and multiphoton tunable infrared laser experiments. The binding energies of the two J= 3/2 and J= 5/2 fine-structure levels were found to be 0.527 234 (25) and 0.525 489 (20) eV, respectively for Si−, 0.401 44 (10) and 0.377 27 (6) eV for Ge−, and 0.397 617 (15) and 0.304 635 (15) eV for Sn−. These results constitute improvements in accuracy over previous experimental term energies of up to four orders of magnitude and further provide experimental values for the 2 D fine-structure splittings: 14.08 (20), 192.6 (9), and 749.95 (15) cm− 1 for Si−, Ge−, and Sn−, respectively. In addition, the photodetachment thresholds of the ionic 4 S 3/2 ground states have been reinvestigated. This resulted in improved electron affinities of 1.262 119 (20), 1.389 521 (20), 1.232 712 (15), and 1.112 067 (15) eV for C−, Si−, Ge−, and Sn−, respectively. Various attempts towards an observation of the very weakly bound C−(2 D) and Si−(2 P) terms remain unsuccessful.