Shunt resistance and saturation current determination in CdTe and CIGS solar cells. Part 1: a new theoretical procedure and comparison with other methodologies
Shunt resistance and saturation current determination in CdTe and CIGS solar cells. Part 1: a new theoretical procedure and comparison with other methodologies
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DOI：
10.1088/1361-6641/aab017
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发表时间：
2018-04-01
影响因子：
1.9
通讯作者：
Contreras-Puente, Gerardo-Silverio
中科院分区：
文献类型：
--
作者：
Rangel-Kuoppa, Victor-Tapio;Albor-Aguilera, Maria-de-Lourdes;Contreras-Puente, Gerardo-Silverio
提出了一种在单二极管模型中提取太阳电池电流-电压(I-V)测量的分流电阻(R-sh)和饱和电流(I-sat)的新方案。首先，将Cheung方法推广到串联电阻(R-S)、理想因子(N)和I-sat的一个上限。本文是两部分的第一部分，提出了在一定电压范围内获得R-sh和I-sat拟合值的两种方法。将这两种方法用于两条模拟的I-V曲线(一条在黑暗中，另一条在光照下)，以恢复已知的太阳电池参数R-sh、R-S、n、i-Sat和光电流I-Lig，并检验其准确性。该方法与两种不同的常用参数提取方法进行了比较。在第二部分中，我们使用并比较了这三种方法在CDS-CDTe和CIGS-CDS太阳电池的I-V曲线中的应用。
A new proposal for the extraction of the shunt resistance (R-sh) and saturation current (I-sat) of a current-voltage (I-V) measurement of a solar cell, within the one-diode model, is given. First, the Cheung method is extended to obtain the series resistance (R-s), the ideality factor (n) and an upper limit for I-sat. In this article which is Part 1 of two parts, two procedures are proposed to obtain fitting values for R-sh and I-sat within some voltage range. These two procedures are used in two simulated I-V curves (one in darkness and the other one under illumination) to recover the known solar cell parameters R-sh, R-s, n, I-sat and the light current I-lig and test its accuracy. The method is compared with two different common parameter extraction methods. These three procedures are used and compared in Part 2 in the I-V curves of CdS-CdTe and CIGS-CdS solar cells.