RF Characteristics of a Fully Ion-Implanted MESFET with Highly Doped Thin Channel Layer on a Bulk Semi-Insulating 4H-SiC Substrate.
RF Characteristics of a Fully Ion-Implanted MESFET with Highly Doped Thin Channel Layer on a Bulk Semi-Insulating 4H-SiC Substrate.
复制标题
大块半绝缘 4H-SiC 衬底上具有高掺杂薄沟道层的完全离子注入 MESFET 的射频特性。
DOI：
10.4028/www.scientific.net/msf.600-603.1107
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发表时间：
2008
期刊：
影响因子：
--
通讯作者：
M. Arai
中科院分区：
文献类型：
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作者：
S. Katakami;S. Ono;M. Arai
采用离子注入的方法在块状4H-SiC半绝缘衬底上制备了0.5 μm栅极MESFET。我们的器件设计使用了一层薄的、高度掺杂的通道层，该通道层以单能量植入，以改善器件的射频特性。在1700℃退火的离子注入MESFET的电学特性优于1300℃退火的离子注入MESFET。所制备的离子注入MESFET的最大跨导为32.8 mS/mm， fT/fmax为9.1/26.2 GHz。在2ghz时，饱和输出功率为26.2 dBm （2.1 W/mm）。这些数值与传统的带凹槽栅的外延MESFET相同。
We fabricated a 0.5-μm-gate MESFET on a bulk 4H-SiC semi-insulating substrate using ion implantation for the channel and contact regions. Our device design used a thin, highly doped channel layer, which was implanted at single energy to improve the device’s RF characteristics. The electrical characteristics of the ion-implanted MESFET annealed at 1700°C were better than those of the ion-implanted MESFET annealed at 1300°C. The fabricated ion-implanted MESFET has a maximum transconductance of 32.8 mS/mm and an fT/fmax of 9.1/26.2 GHz. The saturated output power was 26.2 dBm (2.1 W/mm) at 2 GHz. These values were the same as those of the conventional epitaxial MESFET with a recessed gate.