Applicability of continuum absorption in semiconductor quantum wells to absolute absorption-strength standards
Applicability of continuum absorption in semiconductor quantum wells to absolute absorption-strength standards
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DOI：
10.1063/1.4737900
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发表时间：
2012-07
影响因子：
4
通讯作者：
M. Yoshita;K. Kamide;H. Suzuura;H. Akiyama
中科院分区：
文献类型：
--
作者：
M. Yoshita;K. Kamide;H. Suzuura;H. Akiyama
研究了半导体量子阱中二维连续吸收的绝对强度，并将其应用于吸收强度标准。我们提出了QW中连续态吸光度的方程，表明吸光度在带边缘附近基本上由一个与精细结构常数成正比的通用值来描述，并带有带混合效应和库仑增强效应的校正项。利用k·p方程和所建立的能带参数，通过对典型半导体量子阱中校正项的定量估计，计算了吸光度。结果表明，QW的吸光度适用于吸光度强度标准。
The absolute strength of two-dimensional continuum absorption in semiconductor quantum wells (QWs) was investigated for application to an absorption-strength standard. We presented an equation for the continuum-state absorbance in a QW, showing that the absorbance near the band edge is essentially described by a universal value proportional to the fine-structure constant with correction terms for band-mixing effects and Coulomb enhancement effects. By using k·p equations with the established band parameters, we calculated the absorbance with quantitative estimations of the correction terms in typical semiconductor QWs. The results indicate that the absorbance of the QW is applicable to an absorption-strength standard.