Multiple-height Microstructures Fabricated by ICP-RIE and Embedded Masking Layers
Multiple-height Microstructures Fabricated by ICP-RIE and Embedded Masking Layers
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由 ICP-RIE 和嵌入式掩模层制造的多高度微结构
DOI：
10.1541/ieejsmas.120.493
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发表时间：
2000
影响因子：
--
通讯作者：
H. Fujita
中科院分区：
文献类型：
--
作者：
M. Mita;Y. Mita;H. Toshiyoshi;H. Fujita
由于光刻的加工限制，只有宽度和长度是设计硅微机械结构机械特性的可控参数，而厚度则由层的厚度预先确定。因此，机电性能的范围受到这些可调参数的实际范围的强烈限制。在本文中，我们提出了一种普遍适用的制造技术，通过局部控制 ICP-RIE（感应耦合等离子体反应离子蚀刻）的蚀刻深度来实现多高度微结构。在衬底的初始表面上制备了几层不同材料的蚀刻掩模，以避免在蚀刻表面上重复光刻。这项技术使我们在设计MEMS结构时多了一个自由度。
Due to the processing limitation of photolithography, only width and length have been controllable parameters for designing mechanical characteristics of silicon micromachined structures, while thickness has been left pre-determined by the thickness of layers. The range of electromechanical properties have been, therefore, strongly limited by the practical range of these tunable parameters. In this paper, we present a universally applicable fabrication technique to realize multiple-height microstructures by locally controlling the etching depth of ICP-RIE (inductively coupled plasma reactive ion etching). Several layers of etching masks of different materials have been prepared on the initial surface of substrate to avoid repeating photolithography on the etched surfaces. This technique enables us to have one more degree of freedom in designing MEMS structures.