Effect of thermal annealing on emission characteristics of nano electron source fabricated using beam assisted process
Effect of thermal annealing on emission characteristics of nano electron source fabricated using beam assisted process
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DOI：
10.1116/1.1884117
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发表时间：
2004-07
期刊：
影响因子：
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通讯作者：
K. Murakami;N. Yamasaki;S. Abo;F. Wakaya;M. Takai
中科院分区：
文献类型：
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作者：
K. Murakami;N. Yamasaki;S. Abo;F. Wakaya;M. Takai
在这项研究中，热退火对单个场致发射体的栅极和阴极之间的漏电流的角度进行了研究。通过热退火提高了束流辅助工艺制备的纳米电子源的发射效率和工作百分比。因此，在束辅助工艺之后的后退火对于减小纳米电子源中的漏电流是有效的。
In this study, the thermal annealing effects on a single field emitter from the view point of the leakage current between the gate and cathode were investigated. The emission efficiency and percentage of working nano electron sources fabricated beam assisted processes were improved by thermal annealing. Thus the post annealing after beam-assisted processes is effective in reducing leakage current in nano electron sources.