Photoluminescence transient study of surface defects in ZnO nanorods grown by chemical bath deposition
Photoluminescence transient study of surface defects in ZnO nanorods grown by chemical bath deposition
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DOI:
10.1063/1.4914067
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发表时间:
2015-03-02
影响因子:
4
通讯作者:
Mirabella, S.
中科院分区:
文献类型:
--
作者:
Barbagiovanni, E. G.;Strano, V.;Mirabella, S.
Two deep level defects (2.25 and 2.03 eV) associated with oxygen vacancies (Vo) were identified in ZnO nanorods (NRs) grown by low cost chemical bath deposition. A transient behaviour in the photoluminescence (PL) intensity of the two Vo states was found to be sensitive to the ambient environment and to NR post-growth treatment. The largest transient was found in samples dried on a hot plate with a PL intensity decay time, in air only, of 23 and 80 s for the 2.25 and 2.03 eV peaks, respectively. Resistance measurements under UV exposure exhibited a transient behaviour in full agreement with the PL transient, indicating a clear role of atmospheric O-2 on the surface defect states. A model for surface defect transient behaviour due to band bending with respect to the Fermi level is proposed. The results have implications for a variety of sensing and photovoltaic applications of ZnO NRs. (C) 2015 AIP Publishing LLC.