Nitride quantum light sources
Nitride quantum light sources
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DOI：
10.1209/0295-5075/113/38001
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发表时间：
2016-02-01
期刊：
影响因子：
1.8
通讯作者：
Oliver, R. A.
中科院分区：
文献类型：
--
作者：
Zhu, T.;Oliver, R. A.
原型氮化物量子光源，特别是单光子发射器，已被成功证明，尽管在这个复杂的材料系统固有的挑战。不同氮化物合金之间的大能带偏移允许器件在容易达到的温度下工作。已经探索了各种各样的方法：不仅是自组装量子点生长，而且还有用于位点控制纳米结构形成的光刻方法。所有这些方法都面临着共同的挑战，特别是污染单光子流的强背景信号和量子点发射波长的过度光谱扩散。如果能够成功克服这些挑战，那么传统III-V族半导体的持续快速发展将为氮化物的未来发展提供路线图。版权所有（C）2016 EPLA
Prototype nitride quantum light sources, particularly single-photon emitters, have been successfully demonstrated, despite the challenges inherent in this complex materials system. The large band offsets available between different nitride alloys have allowed device operation at easily accessible temperatures. A wide range of approaches has been explored: not only self-assembled quantum dot growth but also lithographic methods for site-controlled nanostructure formation. All these approaches face common challenges, particularly strong background signals which contaminate the single-photon stream and excessive spectral diffusion of the quantum dot emission wavelength. If these challenges can be successfully overcome, then ongoing rapid progress in the conventional III-V semiconductors provides a roadmap for future progress in the nitrides. Copyright (C) EPLA, 2016