Impact of improved mobility and low flicker noise MOS transistors using accumulation mode fully depleted silicon-on-insulator devices
Impact of improved mobility and low flicker noise MOS transistors using accumulation mode fully depleted silicon-on-insulator devices
复制标题
使用累积模式全耗尽绝缘体上硅器件提高迁移率和低闪烁噪声 MOS 晶体管的影响
DOI：
10.1109/icsict.2006.306078
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发表时间：
2006
期刊：
影响因子：
--
通讯作者：
T. Ohmi
中科院分区：
文献类型：
--
作者：
W. Cheng;A. Teramoto;P. Gaubert;M. Hirayama;T. Ohmi
采用常关积累模式器件结构，提高全耗尽绝缘体上硅（FD-SOI）MOSFET的迁移率和低闪烁噪声器件特性。结果表明，与反型MOSFET相比，积累型FD-SOI n型和p-MOSFET的电流驱动能力提高了1.3倍以上。由于在相同的栅偏压下较低的有效电场和体电流分量，积累模式MOSFET的有效迁移率得到提高。积累模式FD-SOI n-和p-MOSFET的闪烁噪声特性比反转模式MOSFET低约1位数，并且显示SOI层掺杂浓度依赖性
Improved mobility and low flicker noise device characteristics of fully depleted silicon-on-insulator (FD-SOI) MOSFETs are focused in this paper, using normally off accumulation mode device structures. It is demonstrated that the current drivabilities of both accumulation mode FD-SOI n-and p-MOSFETs are improved above 1.3 times compared with inversion mode MOSFETs. The effective mobilities of accumulation mode MOSFETs are improved because of the lower effective electric field at the same gate bias and the bulk current components. The flicker noise characteristics in both accumulation mode FD-SOI n- and p-MOSFETs are about 1 digit lower compared with the inversion mode MOSFETs and show the SOI layer doping concentration dependences