SURFACE CHEMISTRY FROM SPECTRAL ANALYSIS OF TOTALLY INTERNALLY REFLECTED RADIATION
SURFACE CHEMISTRY FROM SPECTRAL ANALYSIS OF TOTALLY INTERNALLY REFLECTED RADIATION
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DOI：
10.1021/j100838a005
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发表时间：
1960-01-01
影响因子：
--
通讯作者：
HARRICK, NJ
中科院分区：
文献类型：
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作者：
HARRICK, NJ
本文研究了全内反射现象，并考虑将其应用于光学透明材料，特别是半导体表面光谱的研究。结果表明，这种辐射能穿透表面进入稀有介质，其穿透深度符合麦克斯韦理论，并且这种辐射对表面上的分子吸收很敏感。如果薄膜厚度等于或小于穿透深度，则每次反射的相互作用程度与单次透射所观察到的相互作用程度相当。由于许多全内反射可以在没有功率损失的情况下使用，因此这种技术在研究光学透明材料表面的化学和可以沉积在光学上更致密和透明的衬底上的薄膜的化学中应该是敏感的。
A study has been made ofthe phenomenon of total internal reflection with the possibility in mind of applying it to the study of the spectra of surfaces of optically transparent materials, particularly semiconductors. It is found that the radiation penetrates the surfaces into the rarer medium to a depth predicted by Maxwell’s theory and that this radiation is sensi-tive to molecular absorption on the surface. The degree ofinteraction on each reflection is comparable to that observed for a single transmission if the film thickness is equal to or less than the penetration depth. Since many total internal re-flections can be used without power loss, this technique should be a sensitive one in the study of the chemistry of surfaces of optically transparent materials and of thin films which can be deposited on optically more dense and transparent dielectrics.