Dynamically stable gallium surface coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN
Dynamically stable gallium surface coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN
复制标题
DOI：
10.1063/1.1471923
复制
发表时间：
2002-06-15
影响因子：
3.2
通讯作者：
Daudin, B
中科院分区：
文献类型：
--
作者：
Adelmann, C;Brault, J;Daudin, B
用反射高能电子衍射法系统地研究了等离子体辅助分子束外延(PAMBE)生长GaN过程中GaN表面覆盖率随Ga通量和衬底温度的变化规律。作为结果，描绘了PAMBE过程中Ga表面覆盖率随生长条件的变化关系图。特别地，我们发现在该图中存在一个区域，在该区域中，Ga的表面覆盖率与Ga通量或衬底温度的波动无关，并且形成了GaN生长的“生长窗口”。讨论了GaN表面复盖率对GaN表面形貌和生长动力学的影响。(C)2002年美国物理研究所。
The Ga surface coverage during the growth of GaN by plasma-assisted molecular-beam epitaxy (PAMBE) has been systematically studied by reflection high-energy electron diffraction as a function of the Ga flux and the substrate temperature. As a consequence, a diagram is depicted, which describes the Ga surface coverage during PAMBE as function of growth conditions. In particular, we show that a region exists in this diagram, in which the Ga surface coverage is independent of fluctuations in the Ga flux or the substrate temperature and which forms a "growth window" for GaN growth. The influence of the Ga surface coverage on the GaN surface morphology and the growth kinetics is discussed. (C) 2002 American Institute of Physics.