Dynamic NBTI Management Using a 45 nm Multi-Degradation Sensor
Dynamic NBTI Management Using a 45 nm Multi-Degradation Sensor
复制标题
使用 45 nm 多重退化传感器进行动态 NBTI 管理
DOI：
10.1109/tcsi.2011.2163894
复制
发表时间：
2011
期刊：
影响因子：
--
通讯作者：
D. Blaauw
中科院分区：
文献类型：
--
作者：
Prashant Singh;E. Karl;D. Sylvester;D. Blaauw
本文提出了一种在 45 nm 工艺节点设计的低功耗统一氧化物和负偏压温度不稳定性 (NBTI) 退化传感器。该电池功耗比之前提出的传感器低 105。统一的特性可实现高效的可靠性监控，同时减少传感器部署工作量和面积开销。首次使用传感器实现动态 NBTI 管理 (DNM)。由于优于最坏情况的操作条件，DNM 会用设计中存在的多余“可靠性裕度”与性能进行交换。对于本文所示的典型案例，DNM 允许加速电源电压平均提升 90 mV，同时将 NBTI 裕量从 22.5 mV 降低至 8 mV，其中 NBTI 总预算为 66 mV。
This paper proposes a low power unified oxide and negative bias temperature instability (NBTI) degradation sensor designed in 45 nm process node. The cell power consumption is 105 lower than a previously proposed sensor. The unified nature enables efficient reliability monitoring with reduced sensor deployment effort and area overhead. Using the sensor dynamic NBTI management (DNM) has been implemented for the first time. DNM trades the excess “reliability margin” present in the design, due to better than worst case operating conditions, with performance. For the typical case shown in this paper, DNM allows for an average boost of 90 mV in accelerated supply voltage while bringing down the excess NBTI margin of 22.5 mV to 8 mV where the total budget for NBTI was 66 mV.