Scale-Up of Room-Temperature Constructive Quantum Interference from Single Molecules to Self-Assembled Molecular-Electronic Films.
Scale-Up of Room-Temperature Constructive Quantum Interference from Single Molecules to Self-Assembled Molecular-Electronic Films.
复制标题
从单分子到自组装分子电子膜的室温构建量子干扰的扩展。
DOI:
10.1021/jacs.9b13578
复制
发表时间:
2020-05-13
影响因子:
15
通讯作者:
Lambert CJ
中科院分区:
文献类型:
--
作者:
Wang X;Bennett TLR;Ismael A;Wilkinson LA;Hamill J;White AJP;Grace IM;Kolosov OV;Albrecht T;Robinson BJ;Long NJ;Cohen LF;Lambert CJ
The realization of self-assembled molecular-electronic films, whose room-temperature transport properties are controlled by quantum interference (QI), is an essential step in the scale-up of QI effects from single molecules to parallel arrays of molecules. Recently, the effect of destructive QI (DQI) on the electrical conductance of self-assembled monolayers (SAMs) has been investigated. Here, through a combined experimental and theoretical investigation, we demonstrate chemical control of different forms of constructive QI (CQI) in cross-plane transport through SAMs and assess its influence on cross-plane thermoelectricity in SAMs. It is known that the electrical conductance of single molecules can be controlled in a deterministic manner, by chemically varying their connectivity to external electrodes. Here, by employing synthetic methodologies to vary the connectivity of terminal anchor groups around aromatic anthracene cores, and by forming SAMs of the resulting molecules, we clearly demonstrate that this signature of CQI can be translated into SAM-on-gold molecular films. We show that the conductance of vertical molecular junctions formed from anthracene-based molecules with two different connectivities differ by a factor of approximately 16, in agreement with theoretical predictions for their conductance ratio based on CQI effects within the core. We also demonstrate that for molecules with thioether anchor groups, the Seebeck coefficient of such films is connectivity dependent and with an appropriate choice of connectivity can be boosted by ∼50%. This demonstration of QI and its influence on thermoelectricity in SAMs represents a critical step toward functional ultra-thin-film devices for future thermoelectric and molecular-scale electronics applications.
登录
查看更多内容
影响因子:
3.3
作者:
Gomar-Nadal, E;Ramachandran, GK;Lindsay, SM
通讯作者:
Lindsay, SM
影响因子:
64.8
作者:
Garner, Marc H.;Li, Haixing;Solomon, Gemma C.
通讯作者:
Solomon, Gemma C.
影响因子:
6.7
作者:
Herrer, L.;Ismael, A.;Cea, P.
通讯作者:
Cea, P.
影响因子:
16.6
作者:
Arroyo, Carlos R.;Tarkuc, Simge;van der Zant, Herre S. J.
通讯作者:
van der Zant, Herre S. J.
影响因子:
38.3
作者:
Guedon, Constant M.;Valkenier, Hennie;van der Molen, Sense Jan
通讯作者:
van der Molen, Sense Jan