Dopant profiling in vertical ultrathin channels of double-gate metal-oxide-semiconductor field-effect transistors by using scanning nonlinear dielectric microscopy
Dopant profiling in vertical ultrathin channels of double-gate metal-oxide-semiconductor field-effect transistors by using scanning nonlinear dielectric microscopy
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DOI：
10.1063/1.1812571
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发表时间：
2004-11-01
影响因子：
4
通讯作者：
Suzuki, E
中科院分区：
文献类型：
--
作者：
Masahara, M;Hosokawa, S;Suzuki, E
利用扫描非线性介电显微镜对双栅金属氧化物半导体场效应晶体管垂直沟道（UTCs）进行了纳米尺度的掺杂分布研究。通过取向依赖性湿法蚀刻在体硅衬底上形成18-58 nm厚和175 nm高的UTCs。通过倾斜离子注入在UTC顶部制备n（+）/p结。通过将UTC以超平缓的角度斜切，UTC的垂直大小被放大了86倍。使用斜面样品，在UTC的掺杂剂深度分布的沟道厚度依赖性进行了定量研究。有人发现，当沟道厚度减小到18 nm时，发生显著的掺杂剂损失。(C)2004年，美国物理学会。
Nanometer-scale dopant profiling in the vertical ultrathin channels (UTCs) of double-gate metal-oxide-semiconductor field-effect transistors has been performed by using scanning nonlinear dielectric microscopy. UTCs 18-58 nm thick and 175 nm high were formed on a bulk silicon substrate by orientation-dependent wet etching. An n(+)/p junction was fabricated on the top of the UTC by angled ion implantation. By beveling the UTC with an ultragentle angle, the vertical size of the UTC was amplified by a factor of 86. Using the beveled samples, the channel thickness dependence of the dopant depth profile in the UTC was quantitatively investigated. It was found that a significant dopant loss occurs when the channel thickness is reduced to 18 nm. (C) 2004 American Institute of Physics.