Initial stages of growth of heteroepitaxial yttria-stabilized zirconia films on silicon substrates
Initial stages of growth of heteroepitaxial yttria-stabilized zirconia films on silicon substrates
复制标题
DOI：
10.1149/1.1394098
复制
发表时间：
2000-12-01
影响因子：
3.9
通讯作者：
Mongeon, S
中科院分区：
文献类型：
--
作者：
Bunt, P;Varhue, WJ;Mongeon, S
本文提出了一种在硅衬底上生长高质量异质外延氧化钇稳定氧化锆薄膜的低温工艺。该技术涉及在电子回旋共振等离子体流反应器中的反应溅射。这种异质外延Rim在Si上的成功生长对于诸如Si上的高温超导体、绝缘体上的硅和用于动态随机存取存储器应用的高介电常数的应用是重要的。通过X-射线衍射、卢瑟福背散射光谱和透射电子显微镜对本研究中制备的材料进行了测定，结果表明该材料具有高的结晶质量。在Si衬底表面上的氧钝化层的存在被确定为对这种材料的异质外延生长是重要的。一旦异质外延生长建立，它可以成功地继续在衬底温度低至200 degreesC。还观察到材料质量随着膜厚度的增加而改善，这是由于自修复过程。此外，通过沉积后的高温退火步骤，可以显著改善材料质量。(C)2000年电化学学会。S0013-4651（00）08-081-2。All rights reserved.
A low temperature process has been developed to grow high quality heteroepitaxial yttria-stabilized zirconia films on Si substrates at 200-800 degreesC. The technique involves reactive sputtering in an electron cyclotron resonance plasma stream reactor. Successful growth of this heteroepitaxial Rim on Si is important for applications such as high temperature superconductors on Si, silicon-on-insulator, and high permittivity dielectrics for dynamic random access memory applications. The material prepared in this investigation was determined to he of high crystalline quality by X-ray diffraction, Rutherford backscattering spectrometry, and transmission electron microscopy. The presence of an oxygen passivating layer on the Si substrate surface was determined to he important fur the heteroepitaxial growth of this material. Once heteroepitaxial growth is established, it can be successfully continued at substrate temperatures as low as 200 degreesC. Material quality was also observe to improve with increasing film thickness due to a self-healing process. Furthermore, material quality could he significantly improved by a postdeposition high temperature anneal step. (C) 2000 The Electrochemical Society. S0013-4651(00)08-081-2. All rights reserved.