Thermal characterization of the SiO2-Ge2Sb2Te5 interface from room temperature up to 400 °C
Thermal characterization of the SiO2-Ge2Sb2Te5 interface from room temperature up to 400 °C
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DOI：
10.1063/1.3284084
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发表时间：
2010-02-15
影响因子：
3.2
通讯作者：
Varesi, E.
中科院分区：
文献类型：
--
作者：
Battaglia, J. -L.;Kusiak, A.;Varesi, E.
Ge 2Sb 2 Te 5（GST）层的热导率，以及GST和非晶SiO2之间的界面处的热边界电阻，使用光热辐射测量实验测量。在Ge 2Sb 2 Te 5中的两个相变被恢复，从非晶开始，在130摄氏度扫描到面心立方（fcc）晶态，然后在310摄氏度扫描到六方晶相（hcp）。热导率在非晶相中保持恒定，而在两种结晶状态之间演变。GST-SiO2界面处的热边界电阻估计为hcp相高于非晶和fcc相。
The thermal conductivity of Ge2Sb2Te5 (GST) layers, as well as the thermal boundary resistance at the interface between the GST and amorphous SiO2, was measured using a photothermal radiometry experiment. The two phase changes in the Ge2Sb2Te5 were retrieved, starting from the amorphous and sweeping to the face centered cubic (fcc) crystalline state at 130 degrees C and then to the hexagonal crystalline phase (hcp) at 310 degrees C. The thermal conductivity resulted to be constant in the amorphous phase, whereas it evolved between the two crystalline states. The thermal boundary resistance at the GST-SiO2 interface was estimated to be higher for the hcp phase than for the amorphous and fcc ones.