Gate-Tunable Fano Resonances in Parallel-Polyacene-Bridged Carbon Nanotubes
Gate-Tunable Fano Resonances in Parallel-Polyacene-Bridged Carbon Nanotubes
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DOI：
10.1021/acs.jpcc.9b00643
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发表时间：
2019-01
期刊：
影响因子：
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通讯作者：
K. Dou;Ching-Hao Chang;C. Kaun
中科院分区：
文献类型：
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作者：
K. Dou;Ching-Hao Chang;C. Kaun
通过电可调Fano共振实现电子输运的纳米器件具有巨大的应用潜力，但迄今为止仍然很少可用。使用第一性原理计算，我们表明，双路径分子结下施加的栅极电压可以实现这样的目标。结果表明，两条路径之间的串扰可以映射到理想的Fano-Anderson模型，即单路径结耦合到孤立的量子点。当栅压适度增加时，Fano共振峰的线形由不对称逐渐演化为对称的Breit-Wigner峰。这个系统的意义是说明了相当大的耦合强度与栅极电压的线性比例。在此方案的基础上，我们提出这些可调Fano分子结可以作为高效的晶体管和热电能量转换器件。
A nanoscale device functioning in electronic transport via electrically tunable Fano resonances has huge potential for applications but is still rarely available to date. Using first-principles calculations, we show that a double-path molecular junction under an applied gate voltage can realize such a goal. It turns out that the crosstalk between two paths can be mapped to an ideal Fano–Anderson model, a single-path junction coupling to an isolated quantum dot. Its line shape of Fano resonance progressively evolves from an asymmetric to a symmetric Breit–Wigner peak when the gate voltage increases moderately. The significance of this system is illustrated by the sizable coupling strength that scales linearly with the gate voltage. On the basis of this scheme, we propose that these tunable Fano molecular junctions can serve as efficient transistors and thermoelectric energy conversion devices.