GaN‐Based Monolithic Inverter Consisting of Enhancement‐ and Depletion‐Mode MOSFETs by Si Ion Implantation
GaN‐Based Monolithic Inverter Consisting of Enhancement‐ and Depletion‐Mode MOSFETs by Si Ion Implantation
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DOI：
10.1002/pssa.201900550
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发表时间：
2019-11
期刊：
影响因子：
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通讯作者：
H. Okada;Kiyomasa Miwa;Taichi Yokoyama;K. Yamane;A. Wakahara;H. Sekiguchi
中科院分区：
文献类型：
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作者：
H. Okada;Kiyomasa Miwa;Taichi Yokoyama;K. Yamane;A. Wakahara;H. Sekiguchi
在此，研究了Si离子注入对GaN在1011-1014 cm-2剂量范围内对由n沟道增强型和耗尽型MOSFET（E-MOSFET和D-MOSFET）组成的GaN基单片反相器电路的影响。通过Si注入GaN金属氧化物半导体（MOS）电容器的电容-电压（C-V）测量来研究注入剂量依赖性。讨论了高剂量样品C-V曲线在偏压方向上的展宽及其与Si剂量的非线性关系。介绍了在蓝宝石衬底上Mg掺杂浓度为[Mg]=1×1019 cm−3的p-GaN上制备的E-和D-MOSFET的特性。得到了E‐和D‐MOSFET的常开和常关特性。为了进一步改善MOSFET特性，在GaN衬底上使用[Mg]为1×1017 cm−3的低Mg浓度p-GaN层用于单片E-MOSFET和D-MOSFET制造。有效迁移率为38 cm 2（V s）−1，证实了E-MOSFET特性的改善。增强/耗尽型（E/D）反相器的最大电压增益超过1. 5，在同一芯片上的单片E-和D-MOSFET中成功运行。
Herein, the effects of Si ion implantation on GaN in a dose range of 1011–1014 cm−2 towards a GaN‐based monolithic inverter circuit consisting of n‐channel enhancement‐ and depletion‐mode MOSFETs (E‐MOSFET and D‐MOSFET) are investigated. The implantation dose dependence is investigated by capacitance–voltage (C–V) measurement of Si‐implanted GaN metal–oxide–semiconductor (MOS) capacitors. Enhanced stretches of C–V curve in voltage bias direction in higher dose samples and its nonlinear dependence on Si dose are discussed. Characteristics of E‐ and D‐MOSFET fabricated on p‐GaN with Mg doping concentration of [Mg]=1×1019 cm−3 on sapphire substrate are presented. The operation of E‐ and D‐MOSFET with normally‐on and normally‐off characteristics is obtained. To further improve MOSFET characteristics, a low Mg concentration p‐GaN layer with [Mg] of 1×1017 cm−3 on GaN substrate is used for monolithic E‐ and D‐MOSFET fabrication. Improved E‐MOSFET characteristics are confirmed by effective mobility of 38 cm2 (V s)−1. The successful operation of an enhancement/depletion (E/D)‐type inverter with a maximum voltage gain 1.5 beyond unity is presented in monolithic E‐ and D‐MOSFET on the same chip.