Effect of graphene tunnel barrier on Schottky barrier height of Heusler alloy Co2MnSi/graphene/n-Ge junction
Effect of graphene tunnel barrier on Schottky barrier height of Heusler alloy Co2MnSi/graphene/n-Ge junction
复制标题
石墨烯隧道势垒对Heusler合金Co2MnSi/石墨烯/n-Ge结肖特基势垒高度的影响
DOI：
10.1088/1674-1056/25/2/027304
复制
发表时间：
2016
影响因子：
1.7
通讯作者：
Du Yongqian
中科院分区：
文献类型：
--
作者：
Li Gui-fang;Hu Jing;Lv Hui;Cui Zhijun;Hou Xiaowei;Liu Shibin;Du Yongqian
我们证明了在Heusler合金Co2MnSi和Ge(Ge)沟道之间插入石墨烯隧道势垒可以调制肖特基势垒高度和自旋二极管的电阻面积积。我们确认费米能级是偏振光
We demonstrate that the insertion of a graphene tunnel barrier between Heusler alloy Co2MnSi and the germanium (Ge) channel modulates the Schottky barrier height and the resistance–area product of the spin diode. We confirm that the Fermi level is depinne