Band Offsets at Wurtzite/Znic-blende Interfaces and Their Applications
Band Offsets at Wurtzite/Znic-blende Interfaces and Their Applications
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纤锌矿/闪锌矿界面的能带偏移及其应用
DOI：
10.7567/jjaps.32s3.743
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发表时间：
1993
影响因子：
1.5
通讯作者：
T. Nakayama
中科院分区：
文献类型：
--
作者：
M. Murayama;T. Nakayama
用第一性原理赝势方法对纤锌矿(WZ)/闪锌矿(ZB)界面的能带位移进行了分析，给出了WZ/ZB体系电子结构的一般特征。利用计算的偏移量，计算了硫化锌、碳化硅等多型体的带隙能和硅中层错的带隙能。研究发现，能带偏移量的一般概念可以用来解释多型态和层错的电子性质。
Analyzing the calculated band offsets at wurtzite(WZ)/zinc-blende(ZB) interface by the first-principles pseudopotential method, general features of electronic structures of WZ/ZB systems are presented. Using the calculated offsets, band gap energies of polytypes such as ZnS and SiC and of stacking-fault in Si are calculated. It is found that a general idea of band offset can be applied to explain the electronic properties of both polytypes and stacking-fault.