Gradual electroforming and memristive switching in Pt/CuOx/Si/Pt systems
Gradual electroforming and memristive switching in Pt/CuOx/Si/Pt systems
复制标题
Pt/CuOx/Si/Pt 系统中的渐进电铸和忆阻切换
DOI：
10.1088/0957-4484/24/32/325202
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发表时间：
2013-08-16
期刊：
影响因子：
3.5
通讯作者：
Shen, B. G.
中科院分区：
文献类型：
--
作者：
Wei, L. L.;Shang, D. S.;Shen, B. G.
我们报道了室温下射频溅射技术制备的Pt/CuOx/Si/Pt器件的记忆开关效应。与其他铜基金属丝开关系统不同的是，电铸过程中器件电阻逐渐增大，器件电容逐渐减小。逐渐电铸后，器件表现出均匀的记忆开关行为。通过俄格电子能谱分析，提出了基于CuOx/Si界面SiOx层厚度变化和Cu离子迁移的逐步电铸和均匀记忆开关模型。本研究对制备无成形、均质记忆器件具有一定的指导意义。
We report a memristive switching effect in Pt/CuOx/Si/Pt devices prepared by the rf sputtering technique at room temperature. Differently from other Cu-based metal filament switching systems, a gradual electroforming process, marked by a gradual increase of the device resistance and a gradual decrease of the device capacitance, was observed in the current-voltage and capacitance characteristics. After the gradual electroforming, the devices show a uniform memristive switching behavior. By Auger electron spectroscopy analysis, a model based on the thickness change of the SiOx layer at the CuOx/Si interface and Cu ion migration is proposed for the gradual electroforming and uniform memristive switching, respectively. This work should be meaningful for the preparation of forming-free and homogeneous memristive devices.