A New Injection Suppression Structure for Conductivity Modulated Power MOSFETs
A New Injection Suppression Structure for Conductivity Modulated Power MOSFETs
复制标题
电导率调制功率 MOSFET 的新型注入抑制结构
DOI：
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发表时间：
1986
期刊：
影响因子：
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通讯作者：
G. Kanô
中科院分区：
文献类型：
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作者：
D. Ueda;K. Kitamura;H. Takagi;G. Kanô
提出了一种适用于抑制电导调制功率MOSFET中少数载流子注入的新器件结构。新结构的特点是在芯片外围存在n* 环区，该环区电连接到底部P+漏极区。这允许显着抑制过度的载流子注入到外延缓冲区由于降低正向偏置集成PNP晶体管的基极。实验制造的设备表现出改善的开关时间的两倍以上。
A new device structure suited for suppression of Lhe minority carrier injection in the conductivity modulated power MOSFET is presented. The new structure is featured by the presence of the n*ring region at the chip peripheral that is electrically connected to the bottom P+-drain region. This permits the remarkable suppression of excessive carrier injection into the epitaxial-buffer regi-on due to the lowered forward bias to the base of integral PNP transistor. Experimentally fabricated device exhibited an improvement of the switching time by more than twice.