Intermixing in Stranski-Krastanov germanium overlayer on Si(100)
Intermixing in Stranski-Krastanov germanium overlayer on Si(100)
复制标题
Si(100) 上 Stranski-Krastanov 锗覆盖层中的混合
DOI：
10.1116/1.582449
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发表时间：
2000
期刊：
影响因子：
--
通讯作者：
Y. Kuk
中科院分区：
文献类型：
--
作者：
S. Kahng;Y. Ha;D. Moon;Y. Kuk
用扫描隧道显微镜和中能离子散射谱研究了Si（100）-（2×1）表面上的Sttranski-Krastanov Ge覆盖层的生长行为。在350 °C的生长温度下，随着Ge覆盖率的增加，沟道谱中的Si表面峰由于Ge原子的遮蔽而减小，并且在Ge覆盖率小于4个单层时可以用简单的生长模型拟合。 在4和8个单层之间的Ge覆盖率，Si表面峰显示出广泛的增强，这可以解释与生长的小屋坑和三维的小屋团簇在牺牲的Ge润湿层。
The growth behaviors of Stranski–Krastanov Ge overlayers on the Si(100)-(2×1) surface were studied with a combination of scanning tunneling microscopy and medium energy ion scattering spectroscopy. At the growth temperature of 350 °C, as Ge coverage increases, the Si surface peak in the channeling spectra decreases due to the shadowing of Ge atoms and can be fitted by a simple growth model at the Ge coverage less than 4 monolayers. At Ge coverages between 4 and 8 monolayers, the Si surface peak shows a broad enhancement, which can be explained with the growth of hut pits and that of three-dimensional hut clusters at the expense of Ge wetting layers.