Quasi-free-standing bilayer graphene nanoribbons probed by electronic transport
Quasi-free-standing bilayer graphene nanoribbons probed by electronic transport
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DOI：
10.1063/1.4975205
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发表时间：
2017-01
影响因子：
4
通讯作者：
Ilio Miccoli;J. Aprojanz;J. Baringhaus;T. Lichtenstein;Lauren A. Galves;J. Lopes;C. Tegenkamp
中科院分区：
文献类型：
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作者：
Ilio Miccoli;J. Aprojanz;J. Baringhaus;T. Lichtenstein;Lauren A. Galves;J. Lopes;C. Tegenkamp
通过使用自组装和嵌入的概念而无需进一步的光刻和转移过程来直接生长石墨烯纳米结构有利于将其集成到器件应用中。在这封信中，我们报告的双层石墨烯纳米带，通常100 nm的宽度，生长沿着SiC（0001）衬底的步骤边缘。通过氧处理使带与衬底电去耦。利用四探针扫描隧道显微镜（STM）系统，对该体系的微观结构和输运性质进行了全面的研究.在室温下，该带显示出约1 × 1013 cm-2的稳定空穴浓度和高达700 cm 2/Vs的迁移率。高迁移率是电荷载流子的层间跳跃的结果。传输不受台阶粗糙度的限制;因此，这种可扩展的过程可以很容易地扩展到任意形状的结构。
Direct growth of graphene nanostructures by using concepts of self-assembly and intercalation without further lithography and transfer processes is beneficial for their integration into device applications. In this letter, we report on bilayer graphene nanoribbons, typically 100 nm in width, grown along step edges of SiC(0001) substrates. The ribbons are electrically decoupled from the substrate by an oxygen treatment. By means of a 4-tip STM system, the microscopic structure and transport properties were comprehensively studied. The ribbons reveal a robust hole concentration of around 1 × 1013 cm–2 and mobilities up to 700 cm2/Vs at room temperature. The comparably high mobilities are a consequence of interlayer hopping of the charge carriers. The transport is not limited by the step roughness; thus, this scalable process can be easily extended to arbitrarily shaped structures.