Damage Analysis of Plasma-Etched n-GaN Crystal Surface by Nitrogen K Near-Edge X-ray Absorption Fine Structure Spectroscopy
Damage Analysis of Plasma-Etched n-GaN Crystal Surface by Nitrogen K Near-Edge X-ray Absorption Fine Structure Spectroscopy
复制标题
DOI：
10.1143/jjap.51.01ab02
复制
发表时间：
2012-01
影响因子：
1.5
通讯作者：
M. Niibe;T. Kotaka;Retsuo Kawakami;T. Inaoka;K. Tominaga;T. Mukai
中科院分区：
文献类型：
--
作者：
M. Niibe;T. Kotaka;Retsuo Kawakami;T. Inaoka;K. Tominaga;T. Mukai
通过氮 K 近边 X 射线吸收精细结构 (NEXAFS) 光谱分析用 Ar、Kr 或 Xe 等离子体蚀刻的 n-GaN 晶体的表面。 NEXAFS光谱通过样品电流模式下的总电子产率(TEY)法和通过使用光电二极管测量荧光量的总荧光产率(TFY)法进行。随着 Ar 压力从 10 mTorr 增加到 200 mTorr，通过 TEY 方法获得的 Ar 等离子体蚀刻样品的光谱形状变得平滑（钝）。然而，通过TFY方法获得的那些不随压力而变化。这些结果表明蚀刻损伤仅限于距表面小于几纳米的浅部区域。即使通过 TEY 方法测量，也未观察到 Kr 或 Xe 等离子蚀刻样品的 NEXAFS 光谱形状的变化。该结果表明，Kr 或 Xe 等离子蚀刻样品的表面损伤不如 Ar 等离子蚀刻样品明显。
The surface of an n-GaN crystal etched with an Ar, Kr, or Xe plasma was analyzed by nitrogen K near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. The NEXAFS spectroscopy was carried out with the total electron yield (TEY) method in a sample current mode and the total fluorescence yield (TFY) method by measuring the amount of fluorescence using a photodiode. The shapes of the spectra of Ar plasma-etched samples obtained by the TEY method became smooth (blunt) with increasing Ar pressure from 10 to 200 mTorr. However, those obtained by the TFY method did not change with pressure. These results indicate that the etching damage was restricted in the shallow region of less than a few nm from the surface. A change in the NEXAFS spectral shape of Kr or Xe plasma-etched samples was not observed even when measured by the TEY method. This result indicates that the surface damage in Kr or Xe plasma-etched samples was less pronounced than that in Ar plasma-etched samples.