High-Performance Reconfigurable Si Nanowire Field-Effect Transistor Based on Simplified Device Design
High-Performance Reconfigurable Si Nanowire Field-Effect Transistor Based on Simplified Device Design
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DOI：
10.1109/tnano.2016.2521897
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发表时间：
2016-01
影响因子：
2.4
通讯作者：
G. Darbandy;M. Claus;M. Schroter
中科院分区：
文献类型：
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作者：
G. Darbandy;M. Claus;M. Schroter
可重构场效应晶体管（RFFET）作为用于在n型极性和p型极性之间动态切换的器件是令人感兴趣的，这使得能够使用相同的硬件进行不同的逻辑计算。到目前为止，RFT已经实现了一个甚至两个额外的程序门，以实现可重构性。本文提出了一种硅纳米线沟道上只有一个单栅的RFET设计。基于双栅（DG）RFET的测量和器件仿真数据，它表明，所提出的简化单栅（SG）RFET实现了相同的功能和直流特性的更复杂的DG-RFET。除了减少编程门的布线外，SG-RFET还具有可扩展至更小沟道长度的额外优势，从而实现更高的操作速度。
Reconfigurable field-effect transistors (RFETs) are of interest as devices for dynamically switching between n- and p-type polarity which enables different logic computations using the same hardware. So far, RFETs have been realized with one or even two additional program gates for accomplishing reconfigurability. This paper presents an RFET design with just one single-gate on a silicon nanowire channel. Based on measured and device simulation data of a double-gate (DG) RFET, it is shown that the proposed simplified single-gate (SG) RFET achieves the same functionality and dc characteristics as the more complex DG-RFET. Besides reducing the wiring for the program gate(s), the SG-RFET has the additional advantage of being scalable to smaller channel length and thus achieving higher operating speed.