Dielectric properties of semi-insulating Fe-doped InP in the terahertz spectral region
Dielectric properties of semi-insulating Fe-doped InP in the terahertz spectral region
复制标题
太赫兹光谱区半绝缘Fe掺杂InP的介电特性
作者：
L. Alyabyeva;E. Zhukova;E. Zhukova;M. Belkin;B. Gorshunov;B. Gorshunov
我们报道了室温下半绝缘掺铁InP晶圆在2-700 cm−1 （0.06-21 THz）光谱区介电常数的实部和虚部的值和光谱依赖性。数据显示了一些被分配给单声子和双声子以及与杂质相关的吸收过程的吸收带。与之前对未掺杂或低掺杂InP材料的研究不同，我们的数据揭示了不受强自由载流子吸收屏蔽的InP的介电特性，这将有助于设计在太赫兹光谱范围内工作的各种基于InP的电子和光子器件。
We report the values and the spectral dependence of the real and imaginary parts of the dielectric permittivity of semi-insulating Fe-doped InP crystalline wafers in the 2–700 cm−1 (0.06–21 THz) spectral region at room temperature. The data shows a number of absorption bands that are assigned to one- and two-phonon and impurity-related absorption processes. Unlike the previous studies of undoped or low-doped InP material, our data unveil the dielectric properties of InP that are not screened by strong free-carrier absorption and will be useful for designing a wide variety of InP-based electronic and photonic devices operating in the terahertz spectral range.
影响因子：
4
作者：
K. Vijayraghavan;R. W. Adams;A. Vizbaras;M. Jang;C. Grasse;G. Boehm;M. Amann;M. Belkin
通讯作者：
K. Vijayraghavan;R. W. Adams;A. Vizbaras;M. Jang;C. Grasse;G. Boehm;M. Amann;M. Belkin