Origin of the unidentified positive mobile ions causing the bias temperature instability in SiC MOSFETs and their diffusion process
Origin of the unidentified positive mobile ions causing the bias temperature instability in SiC MOSFETs and their diffusion process
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DOI：
10.7567/apex.9.064301
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发表时间：
2016-05
影响因子：
2.3
通讯作者：
H. Shirakawa;K. Kamiya;M. Araidai;Heiji Watanabe;K. Shiraishi
中科院分区：
文献类型：
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作者：
H. Shirakawa;K. Kamiya;M. Araidai;Heiji Watanabe;K. Shiraishi
对于碳化硅金属氧化物半导体场效应晶体管(MOSFET)，研究表明，在传统的氢气退火后，SiO_2中会产生未知的正迁移离子，这导致了被称为偏置温度不稳定性(BTI)的可靠性显著下降。发现这些可移动离子的来源对于制造高可靠性的碳化硅MOSFET具有重要意义。在第一性原理计算的基础上，我们证实了SiCMOSFET的BTI是由氢离子与SiO_2中的类CO_3缺陷相结合引起的。这些氢离子从类CO3缺陷中解离出来，以质子的形式在二氧化硅中扩散。这些结果表明，所观察到的正离子为质子。
For SiC metal–oxide–semiconductor field-effect transistors (MOSFETs), it has been shown that unidentified positive mobile ions are generated in SiO2 after conventional hydrogen annealing, which leads to significant reliability degradation known as bias temperature instability (BTI). Discovering the origin of these mobile ions is important for fabricating highly reliable SiC MOSFETs. On the basis of first-principles calculations, we verified that the BTI of SiC MOSFETs is caused by hydrogen ions combining with CO3-like defects in SiO2. These hydrogen ions dissociate from the CO3-like defects and diffuse “as protons” in SiO2. These results indicate that the observed positive mobile ions are protons.