Controlled etching and regrowth of tunnel oxide for antenna-coupled metal-oxide-metal diodes
Controlled etching and regrowth of tunnel oxide for antenna-coupled metal-oxide-metal diodes
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DOI：
10.1116/1.3204979
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发表时间：
2009-09-01
影响因子：
1.4
通讯作者：
Porod, Wolfgang
中科院分区：
文献类型：
--
作者：
Tiwari, Badri;Bean, Jeffrey A.;Porod, Wolfgang
设计了一种新的红外传感器制作工艺。这些传感器由偶极天线和金属-氧化物-金属（Al-AlOx-Pt）二极管组成。作为电极之一的电子束蒸发的Al的表面使用Ar等离子体清洁，随后原位控制隧道氧化物AlOx的生长。天线、其引线以及限定了天线重叠区域的Al和Pt电极的重叠都使用电子束光刻来限定。这些器件的重叠面积小至50 × 80 nm（2）。我们的过程中的特点包括使用不同的金属形成的二极管，小的二极管尺寸，和控制蚀刻和隧道氧化物的再生长。在10.6 μ m的CO2激光器被用于这些传感器的IR表征。电流-电压和IR测量。发现这些装置的归一化探测率（D*）为2.13 X 10（6）cm Hz（1/2）W-1。(C)2009年美国真空学会。[DOI：10.1116/1.3204979]
The authors have designed a new procedure for fabrication of infrared (IR) sensors. These sensors consist of a dipole antenna coupled with a metal-oxide-metal (MOM) (Al-AlOx-Pt) diode. The surface of electron beam evaporated Al, serving as one of the electrodes, is cleaned using an Ar plasma, followed by in situ controlled growth of the tunneling oxide, AlOx. The antenna, its leads, and the overlap of the Al and Pt electrodes that defines the MOM overlap area are all defined using electron beam lithography. The MOM overlap area of these devices is as small as 50 X 80 nm(2). Features of our process include the use of dissimilar metals for the formation of the MOM diode, small MOM diode size, and controlled etching and regrowth of the tunneling oxide. A CO2 laser at 10.6 mu m was used for the IR characterization of these sensors. Current-voltage and IR measurements are presented. The normalized detectivity (D*) for these devices was found to be 2.13 X 10(6) cm Hz(1/2) W-1. (C) 2009 American Vacuum Society. [DOI:10.1116/1.3204979]