Characteristics of TiO2 Surfaces Etched by Capacitively Coupled Radio Frequency N2 and He Plasmas
Characteristics of TiO2 Surfaces Etched by Capacitively Coupled Radio Frequency N2 and He Plasmas
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DOI：
10.1088/1742-6596/441/1/012038
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发表时间：
2013-06
期刊：
影响因子：
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通讯作者：
Retsuo Kawakami;M. Niibe;Y. Nakano;M. Konishi;Y. Mori;H. Takeuchi;T. Shirahama;T. Yamada;K. Tominaga
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文献类型：
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作者：
Retsuo Kawakami;M. Niibe;Y. Nakano;M. Konishi;Y. Mori;H. Takeuchi;T. Shirahama;T. Yamada;K. Tominaga
我们从实验和模拟的角度研究了电容耦合射频 N2 等离子体蚀刻的锐钛矿 TiO2 薄膜表面的特性。将使用N 2 等离子体获得的结果与使用He等离子体获得的结果进行比较。经 N2 等离子体蚀刻的表面的实验 O/Ti 比率随着蚀刻时间的变化而增加。实验中 O/Ti 比率的增加与气压的变化无关。上述实验结果与模拟结果一致，即表面的Ti原子被N2+离子优先去除。实验中He等离子体刻蚀表面的O/Ti比值也有所增加，这与O原子被He+离子优先去除的模拟结果并不相符。 He 等离子体蚀刻的表面的 O-1s XPS 光谱显示与表面吸附的氧和水相关的峰。在减去每个光谱中吸附的氧和水的成分的情况下，He等离子体蚀刻的表面处的实验O/Ti比显示出降低。这与仿真结果一致。氧气和水的吸附似乎是由周围空气引起的。无论蚀刻时间和气压如何变化，N2 等离子体蚀刻的表面形貌几乎与生长表面相似。相反，He等离子体蚀刻的表面形态随着蚀刻时间的增加而变化。该结果与气压无关。
We have investigated characteristics of anatase TiO2 thin film surfaces etched by a capacitively coupled radio frequency N2 plasma from the viewpoint of both an experiment and a simulation. The result obtained with use of the N2 plasma is compared with that obtained with use of the He plasma. The experimental O/Ti ratio at the surface etched by the N2 plasma increases as a function of etching time. The increase in the experimental O/Ti ratio is independent of a change in gas pressure. The above-mentioned experimental results agree with the simulation result that the Ti atoms at the surface are preferentially removed by N2+ ions. The experimental O/Ti ratio at the surface etched by the He plasma also increases, which does not agree with the simulation result that the O atoms are preferentially removed by He+ ions. The O-1s XPS spectra of the surface etched by the He plasma show the peak associated with oxygen and water adsorbed by the surface. In the case where the component of the adsorbed oxygen and water in each spectrum is subtracted, the experimental O/Ti ratio at the surface etched by the He plasma shows a decrease. This is consistent with the simulation result. The adsorption of oxygen and water seems to be caused by ambient air. Morphology of the surface etched by the N2 plasma is almost similar to that of the as-grown surface regardless of the changes both in etching time and in gas pressure. In contrast, morphology of the surface etched by the He plasma changes as the etching time increases. This result is independent of the gas pressure.