Temperature Dependence of Domain-Wall Creep in Pt/CoFe/Pt Films
Temperature Dependence of Domain-Wall Creep in Pt/CoFe/Pt Films
复制标题
DOI：
10.1109/tmag.2009.2021410
复制
发表时间：
2009-10-01
影响因子：
2.1
通讯作者：
Choe, Sug-Bong
中科院分区：
文献类型：
--
作者：
Kim, Junyeon;Kim, Kab-Jin;Choe, Sug-Bong
研究了具有垂直各向异性的Pt/CoFe/Pt薄膜磁畴壁蠕变行为的温度依赖性。畴壁的蠕变行为是由磁光克尔效应显微镜配备了一个低温恒温器，这使我们能够控制的温度从环境温度下降到85 K。结果表明，在固定磁场作用下，畴壁速度随温度的倒数呈指数下降，这是热激活过程的典型表现。通过测量畴壁的速度，我们证实畴壁蠕变理论是有效的蠕变指数的值为1/4，在我们检查的温度范围内。
The temperature dependence of the magnetic domain-wall creep behavior is examined in Pt/CoFe/Pt films with perpendicular anisotropy. The domain-wall creep behavior is monitored by a magneto-optical Kerr effect microscope equipped with a cryostat, which enables us to control the temperature from the ambient temperature down to 85 K. It is found that the domain-wall speed under a fixed magnetic field is decreased exponentially proportional to the inverse of the temperature, which can be explained as a typical behavior of the thermally activated process. By measuring the field-dependent domain-wall speed, we confirm that the domain-wall creep theory is valid with the value of the creep exponent 1/4, over the temperature range we examine.