The Nanoelectronics Roadmap
The Nanoelectronics Roadmap
复制标题
纳米电子学路线图
DOI：
10.1002/9781118958254.ch01
复制
发表时间：
2014
期刊：
影响因子：
9.7
通讯作者：
J. Hutchby
中科院分区：
文献类型：
--
作者：
J. Hutchby
使用先进的光刻技术（例如，极紫外线或软X射线）与新材料和工艺的使用相结合，正在迅速接近进一步扩大规模的基本极限。这是基于同时控制电荷的位置和流动，同时保持最小能量耗散的要求。预见到这些对晶体管的有效缩放的最终限制，半导体制造业通过国际半导体技术路线图（ITRS）的管理机构，国际路线图委员会（IRC），创建了新兴研究设备（ERD）国际技术工作组（ITWG）。IRC要求该小组识别、评估和跟踪用于扩展和/或最终取代CMOS信息处理技术的新器件的研究和开发。本章首先讨论了预测基于电荷的器件所面临的缩放限制的基本基础，然后介绍了新兴研究器件国际技术工作组的任务。其次是简要介绍了ERD ITWG认为是成功开发新的纳米电子信息处理设备的基础的六项指导原则。本章继续讨论了八个相关性或评价参数和因素，用于比较和评价那些选择用于跟踪的新兴器械。性能和评估因素包括（i）技术缩放，（ii）速度，（iii）能量效率，（iv）增益（逻辑）或ON/OFF比率（存储器），（v）操作可靠性，（vi）操作温度，（vii）CMOS技术兼容性，以及（viii）CMOS架构兼容性。本章最后讨论了一些观察和观点，包括赫伯·克罗默在2000年12月8日的诺贝尔演讲中的观察：“任何足够新和创新的技术的主要应用一直是-并将继续是该技术创造的应用”（准电场和能带偏移：电子教学）。
Aggressive scaling of CMOS devices using advanced lithographic technology (e.g., extreme ultraviolet or soft X‐rays) combined with use of new materials and processes is rapidly approaching fundamental limits to further scaling. This is based on simultaneous requirements to control the location and flow of charge while maintaining minimum energy dissipation. Anticipating these eventual limits on effective scaling of transistors, the semiconductor manufacturing industry, acting through the International Technology Roadmap for Semiconductor's (ITRS's) governing body, the International Roadmap Committee (IRC), created the Emerging Research Device (ERD) International Technical Working Group (ITWG). The IRC charged this group to identify, evaluate, and track research and development of new devices proposed to extend and/or eventually replace CMOS information processing technology. This chapter first discusses the fundamental basis for anticipating scaling limits facing charge‐based devices and then introduces the Emerging Research Device's International Technical Working Group's task. This is followed by a brief introduction of six guiding principles the ERD ITWG considers to be fundamental to successful development of new nanoelectronic information processing devices. The chapter continues with discussion of eight relevance or evaluationparameters and factors used to compare and evaluate those emerging devices chosen for tracking. The performance and evaluation factors include(i) technology scaling, (ii) speed,(iii) energy efficiency, (iv) gain (logic) or ON/OFF ratio (memory), (v) operational reliability, (vi) operational temperature, (vii) CMOS technological compatibility, and (viii) CMOS architecturalcompatibility. The chapter concludes with discussion of a few observations and perspectives, including an observation by Herb Kroemer in his Nobel Lecture on December 8, 2000: “The principal applications of any sufficiently new and innovative technology always have been ‐ and will continue to be applications created by that technology” (Quasi‐Electric Fields and Band Offsets: Teaching Electrons).