Interface states for HfO2/Si structure observed by x-ray photoelectron spectroscopy measurements under bias
Interface states for HfO2/Si structure observed by x-ray photoelectron spectroscopy measurements under bias
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DOI：
10.1063/1.2354436
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发表时间：
2006-09
影响因子：
4
通讯作者：
O. Maida;K. Fukayama;Masao Takahashi;H. Kobayashi;Young-Bae Kim;Hyun-Chul Kim;D. Choi
中科院分区：
文献类型：
--
作者：
O. Maida;K. Fukayama;Masao Takahashi;H. Kobayashi;Young-Bae Kim;Hyun-Chul Kim;D. Choi
1.0nm的氮化硅（SiN）层可以完全阻止HfO2和Si之间的反应。在这种情况下，从偏置下的X射线光电子能谱测量获得的界面态光谱具有两个峰值的上方和下方的midgap，归因于Si悬挂键与SiN中的原子弱相互作用，表明高原子密度的SiN层。当HfO2层沉积在1.0nm的SiO2层上时，SiO2厚度增加到1.6nm。对于这种结构，一个界面态峰是存在的midgap附近，归因于孤立的Si悬挂键，表明低原子密度。
A 1.0nm silicon nitride (SiN) layer can prevent reaction between HfO2 and Si completely. In this case, the interface state spectra obtained from x-ray photoelectron spectroscopy measurements under bias have two peaks above and below the midgap, attributable to Si dangling bonds interacting weakly with an atom in SiN, indicating a high atomic density of the SiN layer. When a HfO2 layer is deposited on a 1.0nm SiO2 layer, the SiO2 thickness increases to 1.6nm. For this structure, one interface state peak is present near the midgap, attributable to isolated Si dangling bonds, indicating a low atomic density.