Self-induced preparation of TiSi nanopins by chemical vapor deposition
Self-induced preparation of TiSi nanopins by chemical vapor deposition
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DOI：
10.1088/0957-4484/18/34/345605
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发表时间：
2007-07
期刊：
影响因子：
3.5
通讯作者：
Jun Du;P. Du;Pengxiao Hao;Yanfei Huang;Zhaodi Ren;W. Weng;G. Han;Gaoling Zhao
中科院分区：
文献类型：
--
作者：
Jun Du;P. Du;Pengxiao Hao;Yanfei Huang;Zhaodi Ren;W. Weng;G. Han;Gaoling Zhao
以SiH 4和TiCl 4为前驱体，采用化学气相沉积法首次在Ti 5Si 3层上成功制备了高密度的单晶正交晶TiSi纳米棒和纳米针。方形纳米棒长约0.5 μm，面积为30 nm × 30 nm。纳米针总共长0.7-1 μm，方形尖端长约200 nm，面积为50 nm × 50 nm。TiSi纳米棒和纳米针从底部沿着正交TiSi晶体的[110]方向沿着生长，其中尖端被向上推动。生长过程可以被定义为自诱导生长。在这里解决的自诱导机制扩展了我们的理解生长纳米结构。
High-density single-crystalline orthorhombic TiSi nanorods and nanopins have been successfully prepared for the first time on a Ti5Si3 layer by chemical vapor deposition, using SiH4 and TiCl4 as the precursors. The quadrate nanorods are approximately 0.5 µm long and 30 nm × 30 nm in area. The nanopins are 0.7–1 µm long in total, with the quadrate tip about 200 nm long and 50 nm × 50 nm in area. The TiSi nanorods and nanopins grow along the [110] direction of the orthorhombic TiSi crystal from the bottom, with the tip being pushed upwards. The growth process can be defined as a self-induced growth. The self-induction mechanism addressed here expands our understanding of growing nanostructures.