Photovoltaic characteristics of Pd doped amorphous carbon film/SiO2/Si
Photovoltaic characteristics of Pd doped amorphous carbon film/SiO2/Si
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DOI：
10.1063/1.3478230
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发表时间：
2010-08
影响因子：
4
通讯作者：
Ming Ma;Q. Xue;Huijuan Chen;X. Zhou;D. Xia;Cheng Lv;J. Xie
中科院分区：
文献类型：
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作者：
Ming Ma;Q. Xue;Huijuan Chen;X. Zhou;D. Xia;Cheng Lv;J. Xie
采用磁控溅射法在n-Si衬底上沉积了Pd掺杂的非晶碳（a-C：Pd）薄膜。研究了a-C：Pd/SiO2/Si和a-C：Pd/Si结的光伏特性。结果表明，在室温下15 mW/cm ~ 2的光照强度下，在350 °C下制备的a-C：Pd/SiO_2/Si太阳电池的功率转换效率高达4.7%，远优于以往报道的a-C/Si结。提高的转换效率归因于Pd掺杂和高温沉积引起的碳膜中sp2键合的碳团簇的增加。
The Pd doped amorphous carbon (a-C:Pd) films were deposited on n-Si substrates with or without a native SiO2 layer using magnetron sputtering. The photovoltaic characteristics of the a-C:Pd/SiO2/Si and a-C:Pd/Si junctions were studied. It is found that under light illumination of 15 mW/cm2 at room temperature, the a-C:Pd/SiO2/Si solar cell fabricated at 350 °C has a high power conversion efficiency of 4.7%, which is much better than the a-C/Si junctions reported before. The enhanced conversion efficiency is ascribed to the Pd doping and the increase in sp2-bonded carbon clusters in the carbon film caused by the high temperature deposition.