Subnanometer Vacancy Defects Introduced on Graphene by Oxygen Gas
Subnanometer Vacancy Defects Introduced on Graphene by Oxygen Gas
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DOI：
10.1021/ja4117268
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发表时间：
2014-02-12
影响因子：
15
通讯作者：
Zettl, Alex
中科院分区：
文献类型：
--
作者：
Yamada, Yasuhiro;Murota, Kazumasa;Zettl, Alex
已知石墨烯的基面比边缘的反应性低，但一些研究观察到与氧气反应后基面中的空位。这些空缺的观察通常限于使用显微技术的纳米级分辨率。这项工作演示了通过在氧气流中在533 K或更低的低温下热处理在石墨烯的基面中引入和观察亚纳米空位。高分辨率透射电子显微镜被用来直接观察空位结构，这与图像模拟进行了比较。这些建议的结构包含C = O，吡喃类醚，和内酯类基团。
The basal plane of graphene has been known to be less reactive than the edges, but some studies observed vacancies in the basal plane after reaction with oxygen gas. Observation of these vacancies has typically been limited to nanometer-scale resolution using microscopic techniques. This work demonstrates the introduction and observation of subnanometer vacancies in the basal plane of graphene by heat treatment in a flow of oxygen gas at low temperature such as 533 K or lower. High-resolution transmission electron microscopy was used to directly observe vacancy structures, which were compared with image simulations. These proposed structures contain C = O, pyran-like ether, and lactone-like groups.