Effect of copper phthalocyanine thickness on surface morphology, optical and electrical properties of Au/CuPc/n-Si heterojunction
Effect of copper phthalocyanine thickness on surface morphology, optical and electrical properties of Au/CuPc/n-Si heterojunction
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铜酞菁厚度对Au/CuPc/n-Si异质结表面形貌、光学和电学性能的影响
DOI：
10.1007/s00339-017-1511-3
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
Chel
中科院分区：
文献类型：
--
作者：
P. Reddy;V. Janardhanam;I. Jyothi;C. S. Harsha;V. Reddy;Sungnam Lee;J. Won;Chel
研究了酞菁铜（CuPc）薄膜厚度（2、5、10、15、20、30和40 nm）对Au/CuPc/n-Si异质结的表面形貌、光学和电学性质的影响。酞菁铜薄膜的光学带隙随着酞菁铜薄膜厚度的增加而增加。通过电流-电压（I-V）和电容-电压（C-V）测量对Au/n-Si肖特基结和Au/CuPc/n-Si异质结的电学性质进行了表征。根据I-V法、Cheung法和Norde法估算了势垒高度、理想因子和串联电阻。的势垒高度增加，随着铜酞菁中间层厚度增加到15 nm，并保持不变的厚度超过20 nm，与所产生的载流子到达界面的能力。从I-VandC-V测量中获得的势垒高度的差异表明界面处存在势垒不均匀性，这由较高的理想因子值证明。结果表明，随着中间层CuPc厚度的变化，Au/n-Si肖特基结的电学特性发生了显著的变化。
Effects of the thickness of copper phthalocyanine (CuPc) film (2, 5, 10, 15, 20, 30 and 40 nm) on the surface morphology, optical and electrical properties of Au/CuPc/n-Si heterojunction have been investigated. The optical band gap of CuPc film was increased with increase in the thickness of the CuPc film. The electrical properties of the Au/n-Si Schottky junction and Au/CuPc/n-Si heterojunctions were characterized by current–voltage (I–V) and capacitance–voltage (C–V) measurements. The barrier height, ideality factor and series resistance were estimated based on theI–V, Cheung’s and Norde’s methods. The barrier heights increased with increasing CuPc interlayer thickness up to 15 nm and remained constant for thickness above 20 nm, associated with the incapability of the generated carriers to reach the interface. The discrepancy in the barrier heights obtained fromI–VandC–Vmeasurements indicates the presence of barrier inhomogeneity at the interface as evidenced by higher ideality factor values. It can be concluded that the electrical properties of Au/n-Si Schottky junction can be significantly altered with the variation of CuPc thickness as interlayer.