Surface state dominated transport in topological insulator Bi2Te3 nanowires
Surface state dominated transport in topological insulator Bi2Te3 nanowires
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DOI：
10.1063/1.4829748
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发表时间：
2013-11-04
影响因子：
4
通讯作者：
Nielsch, Kornelius
中科院分区：
文献类型：
--
作者：
Hamdou, Bacel;Gooth, Johannes;Nielsch, Kornelius
我们报告的低温磁电阻测量单晶Bi 2 Te 3纳米线合成通过催化生长和后退火在富Te气氛中。观察到的Aharonov-Bohm振荡表明拓扑表面态的存在。分析Subnikov-de哈斯振荡的垂直磁阻产生极低的二维载流子浓度和有效电子质量，和非常高的载流子迁移率。我们的研究结果与拓扑绝缘体表面的无质量狄拉克费米子的理论预测非常一致。(C)2013 AIP Publishing LLC.
We report on low temperature magnetoresistance measurements on single-crystalline Bi2Te3 nanowires synthesized via catalytic growth and post-annealing in a Te-rich atmosphere. The observation of Aharonov-Bohm oscillations indicates the presence of topological surface states. Analyses of Subnikov-de Haas oscillations in perpendicular magnetoresistance yield extremely low two-dimensional carrier concentrations and effective electron masses, and very high carrier mobilities. All our findings are in excellent agreement with theoretical predictions of massless Dirac fermions at the surfaces of topological insulators. (C) 2013 AIP Publishing LLC.