Heteroepitaxial growth of high Mg-content single-phased W-MgZnO on ZnO matrixes in various nucleation states for solar-blind and visible-blind dual-band UV photodetectors
Heteroepitaxial growth of high Mg-content single-phased W-MgZnO on ZnO matrixes in various nucleation states for solar-blind and visible-blind dual-band UV photodetectors
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DOI：
10.1016/j.materresbull.2021.111438
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发表时间：
2021-10
影响因子：
5.4
通讯作者：
Xuan Zhou;D. Jiang;Man Zhao;W. Wang
中科院分区：
文献类型：
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作者：
Xuan Zhou;D. Jiang;Man Zhao;W. Wang
采用射频磁控溅射技术在石英（SiO2）衬底上制备了高镁含量的单相纤锌矿结构Mg 0. 51 Zn 0. 49 O（W-Mg 0. 51 Zn 0. 49 O）薄膜。在ZnO缓冲层（BL）上异质外延生长不同成核态的W-Mg 0. 51 Zn 0. 49 O薄膜，制备了金属-半导体-金属（MSM）日盲（SB）和可见盲（VB）双波段紫外（DB-UV）光电探测器（PD）。在270 nm的紫外光照射下，Au/Mg 0.51 Zn 0.49 O/ZnO（30 min）PD具有最佳的外量子效率（EQE，304.4%）和比探测率（1012），表明处理30 min的ZnO BL对提高SB-UV波长的探测效果最好。这些结果的起源归因于MgZnO和ZnO基质之间的接触面积和粘附强度。结果表明，通过ZnO BL制备高Mg含量的MgZnO合金是一条可行的途径，有利于提高材料的性能，并应用于SB/VB DB-UV PD。
High Mg-content single-phase wurtzite Mg0.51Zn0.49O (W-Mg0.51Zn0.49O) films were realized by radio frequency (RF) magnetron sputtering technique on quartz (SiO2) substrates. The metal-semiconductor-metal (MSM) solar-blind (SB) and visible-blind (VB) dual-band ultraviolet (DB-UV) photodetectors (PDs) were also fabricated based on heteroepitaxial growth of W-Mg0.51Zn0.49O films on ZnO buffer layer (BL) at different nucleation states. Under 270 nm of irradiation, the Au/Mg0.51Zn0.49O/ZnO (30 min) PD exhibited an optimal external quantum efficiency (EQE, 304.4%) and specific detectivity (1012), which indicated that the ZnO BL obtained with a 30 min treatment time was most efficient to improve the detection of SB-UV wavelength. The origin of these results was attributed to the contact area and adhesion strength between MgZnO and ZnO matrices. The results showed a feasible way to obtain high Mg-content wurtzite MgZnO alloys and performance improvement through ZnO BL, which is favorable to the applicability in SB/VB DB-UV PDs.