Ionic Liquid Gating Control of Spin Reorientation Transition and Switching of Perpendicular Magnetic Anisotropy
Ionic Liquid Gating Control of Spin Reorientation Transition and Switching of Perpendicular Magnetic Anisotropy
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自旋重定向跃迁的离子液体门控和垂直磁各向异性切换
DOI：
10.1002/adma.201801639
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发表时间：
2018
影响因子：
29.4
通讯作者：
Liu Ming
中科院分区：
文献类型：
--
作者：
Zhao Shishun;Wang Lei;Zhou Ziyao;Li Chunlei;Dong Guohua;Zhang Le;Peng Bin;Min Tai;Hu Zhongqiang;Ma Jing;Ren Wei;Ye Zuo Guang;Chen Wei;Yu Pu;Nan Ce Wen;Liu Ming
垂直磁各向异性(PMA)开关的电场调制以一种节能的方式在实现磁电(ME)存储器和其他ME器件方面具有巨大的潜力。因此，允许磁矩在面外和面内方向之间旋转的自旋重取向转变(SRT)的电压控制是至关重要的。在本工作中，通过离子液体对Au/[DEME]+[TFSi]−/(Co/Pt)2/Ta电容异质结的磁致伸缩控制，在4V的小工作电压下，获得了高达1572Oe的显著磁各向异性场变化，相当于大的ME系数378Oe V−1。铁磁共振测量和磁畴演化观察都表明，通过离子液体门控，磁化强度可以在面外和面内方向稳定可逆地切换。第一性原理计算表明，离子注入门控过程影响界面的自旋-轨道耦合以及Co和Pt层之间的净Rashba磁场，从而导致SRT的调制和面内/面外磁化强度的转换。这项工作展示了一种独特的具有大ME可调性的IL门控PMA，并为实现IL门控自旋电子/电子器件铺平了道路，例如电压可调的PMA存储器。
Electric field (E‐field) modulation of perpendicular magnetic anisotropy (PMA) switching, in an energy‐efficient manner, is of great potential to realize magnetoelectric (ME) memories and other ME devices. Voltage control of the spin‐reorientation transition (SRT) that allows the magnetic moment rotating between the out‐of‐plane and the in‐plane direction is thereby crucial. In this work, a remarkable magnetic anisotropy field change up to 1572 Oe is achieved under a small operation voltage of 4 V through ionic liquid (IL) gating control of SRT in Au/[DEME]+[TFSI]−/Pt/(Co/Pt)2/Ta capacitor heterostructures at room temperature, corresponding to a large ME coefficient of 378 Oe V−1. As revealed by both ferromagnetic resonance measurements and magnetic domain evolution observation, the magnetization can be switched stably and reversibly between the out‐of‐plane and in‐plane directions via IL gating. The key mechanism, revealed by the first‐principles calculation, is that the IL gating process influences the interfacial spin–orbital coupling as well as net Rashba magnetic field between the Co and Pt layers, resulting in the modulation of the SRT and in‐plane/out‐of‐plane magnetization switching. This work demonstrates a unique IL‐gated PMA with large ME tunability and paves a way toward IL gating spintronic/electronic devices such as voltage tunable PMA memories.