Experimental study of plasmonically enhanced GaN nanowire light emitters
Experimental study of plasmonically enhanced GaN nanowire light emitters
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DOI：
10.1002/pssa.200723148
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发表时间：
2008-02-01
影响因子：
2
通讯作者：
Kim, Jihyun
中科院分区：
文献类型：
--
作者：
Mastro, Michael A.;Freitas, Jaime A., Jr.;Kim, Jihyun
利用一种不良氮化纳米线光电器件实现了等离子体增强发射。iii -氮化物系统已被广泛应用于电磁波谱的蓝色、紫色和紫外线部分的光发射体。其应用的一个限制是与通常由异质外延生长的材料的固有缺陷（特别是螺纹位错）相关的效率降低。VLS制造技术固有地产生无缺陷的材料，作为一种优秀的发射和增益介质。在金属有机化学气相沉积系统中开发了两步方法，首先通过VLS机制垂直生长纳米线，必要时通过改变生长条件横向生长纳米线。此外，采用不同的银涂层来增强纳米线中产生的电磁能量向外近场的等离子体转移。(c) 2008 wiley。VCH Verlag GmbH Co. KGaA, Weinheim。
Plasmonic-enhanced emission was achieved from a Ill-nitride nano-wire optoelectronic device. The III-nitride system has been widely applied to light emitters in the blue, violet and ultra-violet portions of the electromagnetic spectrum. One limit to its application has been the efficiency reduction associated with the inherently defective nature (particularly threading dislocations) of the material that is typically grown by hetero-epitaxy. The VLS fabrication technique inherently yields defect-free material that serves as an excellent emission and gain media. A two-step approach was developed in a metalorganic chemical vapor deposition system to grow nano-wires initially vertically by the VLS mechanism and, when necessary, laterally by altering the growth conditions. Furthermore, various silver coatings were employed to enhance the plasmonic-based transfer of electromagnetic energy generated in the nano-wire to the external near-field. (C) 2008 WILEY.VCH Verlag GmbH Co. KGaA, Weinheim.