Self-assembled InAsSb quantum dots on (001) InP substrates
Self-assembled InAsSb quantum dots on (001) InP substrates
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DOI：
10.1063/1.1655690
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发表时间：
2004-02
影响因子：
4
通讯作者：
Y. Qiu;D. Uhl
中科院分区：
文献类型：
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作者：
Y. Qiu;D. Uhl
使用金属有机气相外延技术在 (001) InP 衬底上生长了自组装 InAsSb 量子点 (QD)。发现点密度和尺寸强烈依赖于砷化氢的存在。在InP和GaSb衬底上直接沉积InSb形成了密度小于5×109/cm2的低密度InSb大岛，而通过交替III族和V族前驱体可以自组装密度高达4×1010/cm2的InAsSb量子点，并在In0.53Ga0.47As/InP上实现了高密度几乎纯的InSb量子点。高密度InAsSb量子点的形成是局部非平衡过程和由于砷原子的存在而导致生长表面上In吸附原子迁移率降低的结果，并且在InGaAs/InP上高密度几乎纯InSb量子点的情况下，InAs界面层被认为是造成这种情况的原因。光致发光表明，InSb 量子点在室温下发光范围为 1.7–2.2 μm。
Self-assembled InAsSb quantum dots (QD) on (001) InP substrates have been grown using metalorganic vapor phase epitaxy. The dot density and size are found to be strongly dependent on the presence of arsine. Direct deposition of InSb on InP and GaSb substrates formed large islands of InSb with low density of less than 5×109/cm2, however, InAsSb QDs of density as high as 4×1010/cm2 could be self-assembled by alternating group III and group V precursors, and high density almost pure InSb QDs were achieved on In0.53Ga0.47As/InP. The formation of high density InAsSb QDs is a result of a local nonequilibrium process and a reduction in mobility of In adatoms on the growth surface due to the presence of arsenic atoms, and in the case of high density almost pure InSb QDs on InGaAs/InP, the InAs interface layer is believed to be responsible. Photoluminescence shows that InSb QDs emit light at room temperature in the range of 1.7–2.2 μm.