Voltage-induced infrared absorption of the light-emitting diode based on MEH-PPV
Voltage-induced infrared absorption of the light-emitting diode based on MEH-PPV
复制标题
基于MEH-PPV的发光二极管的电压感应红外吸收
DOI:
10.1016/s0379-6779(00)00822-5
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发表时间:
2001
期刊:
影响因子:
4.4
通讯作者:
T. Ohnishi
中科院分区:
文献类型:
--
作者:
Y. Furukawa;Mitsuru Ishima;T. Noguchi;T. Ohnishi
Infrared spectra of the light-emitting diodes fabricated with poly (2-methoxy-5-(2′-ethylhexyloxy)-p-phenylenevinylene) have been measured in situ with an external reflection apparatus on a Fourier-transform infrared spectrophotometer. Voltage-induced infrared absorption spectra have been measured using the difference-spectrum method. The observed bands have been attributed to injected positive carriers (polarons) on the basis of the spectra of the carriers generated by iodine-doping, Na-doping, and photo-irradiation. The observation of positive carriers is probably related to the predominance of injected positive carriers, which reduces the electroluminescence efficiency of the light-emitting diodes.