Predominant growth of non-polar a-plane (Al,Ga)N on patterned c-plane sapphire by hydride vapor phase epitaxy
Predominant growth of non-polar a-plane (Al,Ga)N on patterned c-plane sapphire by hydride vapor phase epitaxy
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DOI：
10.1063/1.4794098
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发表时间：
2013-03-07
影响因子：
3.2
通讯作者：
Traenkle, G.
中科院分区：
文献类型：
--
作者：
Mogilatenko, A.;Hagedorn, S.;Traenkle, G.
我们首次报道了非极性a面(Al，Ga)N层在图案化的c面AlN/蓝宝石模板上的主要生长，其脊沿[1(1)Over bar 00]Al_2O_3方向取向。薄膜采用氢化物气相外延生长。在生长的第一阶段，(Al，Ga)N同时在脊顶、沟槽内部和沟槽侧壁上形核。结果，相对于水平生长前沿，形成了两种不同的(Al，Ga)N取向：c面脊上和沟槽内部的C面(Al，Ga)N和沟槽侧壁上的a面(Al，Ga)N。A面(Al，Ga)N的生长速度超过了c面区的生长速度，导致a面取向材料完全生长出c面的(Al，Ga)N。(C)2013年美国物理研究所。[http://dx.doi.org/10.1063/1.4794098]
We report for the first time on predominant growth of non-polar a-plane (Al,Ga)N layers on patterned c-plane AlN/sapphire templates with ridges oriented along the [1 (1) over bar 00]Al2O3 direction. The layers were grown by hydride vapor phase epitaxy. During the first stages of the growth (Al, Ga) N nucleates simultaneously on top of the ridges, inside the trenches and on the trench sidewalls. As a result, two different (Al, Ga) N orientations are formed with respect to the horizontal growth front: c-plane (Al, Ga) N on the c-plane ridges as well as inside the trenches and a-plane (Al, Ga) N on the trench sidewalls. The growth rate of a-plane (Al, Ga) N exceeds that of c-plane regions, which leads to the complete overgrowth of c-plane (Al, Ga) N by the a-plane oriented material. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4794098]