Structural and electrical properties of HfLaOx films for an amorphous high-k gate insulator
Structural and electrical properties of HfLaOx films for an amorphous high-k gate insulator
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DOI：
10.1063/1.2227630
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发表时间：
2006-07
影响因子：
4
通讯作者：
Yoshiki Yamamoto;K. Kita;K. Kyuno;A. Toriumi
中科院分区：
文献类型：
--
作者：
Yoshiki Yamamoto;K. Kita;K. Kyuno;A. Toriumi
研究了Si(100)衬底上的HfLaOx薄膜作为一种替代栅绝缘体。La_2O_3的引入提高了HfO_2的晶化温度。此外，与HfSiOx或HfAlOx等其他Hf基非晶态材料不同，HfLaOx的介电常数保持在较高的值(>；20)。使用HfLaOx介质膜的金属氧化物半导体电容器的电容-电压曲线显示出可以忽略的滞后和频率色散，表明界面和体属性都有很小的退化。此外，HfLaOx薄膜中的固定电荷密度很低，这是因为薄膜厚度与平带电压的关系很小。
Thin HfLaOx films on Si(100) have been investigated as an alternative gate insulator. The introduction of La2O3 into HfO2 causes an increase of crystallization temperature. Furthermore, unlike other Hf-based amorphous materials such as HfSiOx or HfAlOx, the permittivity of HfLaOx keeps a high value (>20). The capacitance-voltage curve of metal oxide semiconductor capacitor using the HfLaOx dielectric film has shown a negligible hysteresis and no frequency dispersion, indicating very small degradations of both interface and bulk properties. In addition, a very low fixed charge density in HfLaOx films is demonstrated from a very small film thickness dependence of the flatband voltage.