Ultrathin Fe3O4 epitaxial films on wide bandgap GaN(0001)
Ultrathin Fe3O4 epitaxial films on wide bandgap GaN(0001)
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DOI：
10.1103/physrevb.81.035419
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发表时间：
2010-01
影响因子：
3.7
通讯作者：
P. Wong;Wen Zhang;X. Cui;Jing Wu;Yongbing Xu;Z. Tao;Xiang-Bing Li;Z. Xie;R. Zhang;G. Laan
中科院分区：
文献类型：
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作者：
P. Wong;Wen Zhang;X. Cui;Jing Wu;Yongbing Xu;Z. Tao;Xiang-Bing Li;Z. Xie;R. Zhang;G. Laan
利用分子束外延技术在纤锌矿型宽带隙半导体GaN 0001表面外延生长了超薄膜Fe 3 O 4。反射高能电子衍射图显示Fe 3 O 4薄膜的111取向以及11 <$$> 0 Fe 3 O 4 112 <$0 GaN和112 <$Fe3O4 11 <$00 GaN与GaN 0001的面内外延关系。X射线光电子能谱和X射线磁性圆二色性确认的化学计量的Fe 3 O 4的生长，而不是-Fe 2 O3。用超导量子干涉仪在室温下测得的磁滞回线和饱和磁化强度Ms表明，Fe 3 O 4薄膜的饱和速度很快，其磁化强度接近体单晶的磁化强度值。在平面磁阻MR测量揭示可以忽略不计的小MR效应，进一步表明，薄膜是免费的反相边界。
Ultrathin films of magnetite Fe3O4 have been grown epitaxially on wurtzite wide bandgap semiconductor GaN0001 surfaces using molecular-beam epitaxy. Reflection high-energy electron-diffraction patterns show a 111 orientation of the Fe3O4 films and in-plane epitaxial relationship of 11¯0Fe3O4 112¯0GaN and 112¯Fe3O4 11¯00GaN with the GaN0001. X-ray photoelectron spectroscopy and x-ray magnetic circular dichroism confirm the growth of stoichiometric Fe3O4, instead of -Fe2O3. The magnetic hysteresis loops and saturation magnetization Ms obtained by superconducting quantum interference device at room temperature show fast saturation of the Fe3O4 films with the magnetization close to that of the bulk single-crystal value. In-plane magnetoresistance MR measurements reveal negligibly small MR effects, further indicating that the films are free from antiphase boundaries.